| PART |
Description |
Maker |
| IRF7304 |
Generation V Technology
|
International Rectifier
|
| IRF7311PBF IRF7311PBF-15 |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
| IRF7503 IRF7503TR |
Generation V Technology
Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
